Prolonged photostability in hexagonal boron nitride quantum emitters
نویسندگان
چکیده
Abstract Single-photon emitters are crucial building blocks for optical quantum technologies. Hexagonal boron nitride (hBN) is a promising two-dimensional material that hosts bright, room-temperature single-photon emitters. However, photo instability persistent challenge preventing practical applications of these properties. Here, we reveal the ubiquitous photobleaching hBN vacancy Independent source or number layers, find common emission at 1.98 ± 0.05 eV can be described by two consistent time constants, namely first bleaching lifetime 5 to 10 s, and second in range 150 220 s. Only former environmentally sensitive significantly mitigated shielding O 2 , whereas latter could result carbon-assisted defect migration. Annular dark-field scanning transmission electron microscopy photobleached allows visualizing defects carbon substitution single atom resolution, supporting migration mechanism along with X-ray photoelectron spectroscopy. Thermal annealing 850 °C liquid exfoliated eliminates both processes, leading photostability. These results represent significant advance potentially engineer photostability requisite applications.
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ژورنال
عنوان ژورنال: Communications materials
سال: 2023
ISSN: ['2662-4443']
DOI: https://doi.org/10.1038/s43246-023-00345-8